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V40D120C fiches techniques PDF

Vishay - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Numéro de référence V40D120C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Fabricant Vishay 
Logo Vishay 





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V40D120C fiche technique
www.vishay.com
V40D120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.45 V at IF = 5 A
TMBS ® eSMP® Series
SMPD
K
1
2
Top View
Bottom View
V40D120C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
120 V
IFSM
250 A
VF at IF = 20 A (TA = 125 °C)
0.64 V
TJ max.
150 °C
MECHANICAL DATA
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V40D120C
120
40
20
250
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Revision: 08-Mar-13
1 Document Number: 87951
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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