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ROHM Semiconductor - Super Fast Recovery Diode

Numéro de référence RFN3BM6S
Description Super Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RFN3BM6S fiche technique
Super Fast Recovery Diode
RFN3BM6S
Datasheet
Serise
Standard Fast Recovery
Dimensions (Unit : mm)
Land Size Figure (Unit : mm)
6.0
Application
General rectification
Features
1) Low switching loss
2) Low forward voltage
Construction
Silicon epitaxial planar type
1.6 1.6
1
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
TO-252 2.3 2.3
Structure
Cathode
φ1.55±0.1
  1. 5 5 00.1
Open Anode
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.30.00±.10.1
2.7±0.2
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
600 V
Reverse voltage
VR Direct voltage
600 V
Average rectified foward current
Io 60Hz half sin wave , Resistive load Tc=112°C
3
A
Forward current surge peak
IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
20
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=3A - 1.35 1.55 V
Reverse current
IR
VR=600V
- 0.05 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 18 30 ns
Thermal resistance
Rth(j-c)
Junction to case
- - 6.0 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.01 - Rev.B

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