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ROHM Semiconductor - Super Fast Recovery Diode

Numéro de référence RFN3BM2SFH
Description Super Fast Recovery Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RFN3BM2SFH fiche technique
Super Fast Recovery Diode
RFN3BM2SFH
Datasheet
Series
Standard Fast Recovery
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
6.0
Application
General rectification
1
Features
1) Low switching loss
2) High current overload capacity
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
1.6 1.6
TO-252 2.3 2.3
Structure
Cathode
φ1.55±0.1
  1. 5 5 00.1
Open Anode
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.30.00±.10.1
2.7±0.2
Absolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
200 V
Reverse voltage
VR Direct voltage
200 V
Average rectified foward current Io 60Hz half sin wave , Resistive load
3A
Forward current surge peak
IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
40
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
VF
IR
trr
Rth(j-c)
IF=3A
VR=200V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to case
- 0.9 0.98 V
- 0.05 10 A
- 12 25 ns
- - 6.0 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.01 - Rev.A

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