PDF RFAM3790 Data sheet ( Hoja de datos )

Número de pieza	RFAM3790
Descripción	EDGE QAM INTEGRATED AMPLIFIER
Fabricantes	RF Micro Devices
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No Preview Available ! RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER The RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Power Enable V+ INPUT OUTPUT Preamp Driver Att. adjust Functional Block Diagram Ordering Information RFAM3790SB RFAM3790SQ RFAM3790SR RFAM3790TR7 RFAM3790TR13 RFAM3790PCBA-410 RFAM3790PCK-410 Sample bag with 5 pieces Sample bag with 25 pieces 7” Reel with 100 pieces 7” Reel with 250 pieces 13” Reel with 750 pieces Fully Assembled Evaluation Board Fully Assembled Evaluation Board with Sample Bag Package: 9 pin, 11.0 mm x 11.0 mm x 1.375mm Features  Excellent Linearity  Extremely High Output Capability  Voltage Controlled Attenuator  Power Enable Featrure  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all Terminations  27.5 dB Typical Gain at 1218MHz  410mA Typical at 12VDC Applications  45MHz to 1218MHz Downstream Edge QAM RF Modulators  Headend Equipment RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140820 RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 7 1 page RFAM3790 Evaluation Board Schematic Power Enable Att. Adjust GND RF INPUT C8 4.7nF C9 4.7nF C2 4.7nF T1 RFXF0006 C1 D1 DNI TQP200002 25V 1 2 3 4 U1 RFAM3790 9 8 7 6 5 FB1 Bead 60Ω R1 2.7kΩ D3 TGL34-33A C3 4.7nF V+ D2 MM3Z5V6T1 T2 RFXF0008 C4 4.7nF T3 RFXF0009 C5 4.7nF C6 4.7nF D4 TQP200002 25V C7 DNI RF OUTPUT Evaluation Board Bill of Materials (BOM) Designator C1 C2, C3, C4, C5, C6, C8, C9 C7 R1 FB1 D1, D4 D2 D3 T1 T2 T3 U1 Value DNI 4.7nF DNI 2.7kΩ 60Ω @ 100MHz 25V 5.6V 33V 1:1 2.8:1 1:1 Description optional to improve matching in application Capacitor, X7R, 50V, 10% optional to improve matching in application Resistor, TK200, 5% Impedance Bead, DCR 0.1Ohm, 800mA ESD Protection Zener Diode, 200mW Transient Suppressor Diode, 5% Transformer Transformer Transformer Amplifier Manufacturer Taiyo Yuden Triquint On Semiconductor Diotec RFMD RFMD RFMD RFMD Part Number BK 1608HS600-T TQP200002 MM3Z5V6T1G TGL34-33A RFXF0006 RFXF0008 RFXF0009 RFAM3790 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 7 5 Page

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Número de pieza	Descripción	Fabricantes
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