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PDF RF7413 Data sheet ( Hoja de datos )
| Número de pieza | RF7413 | |
| Descripción | 3V WCDMA BAND 3 LINEAR PA MODULE | |
| Fabricantes | RF Micro Devices | |
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CONFIDENTIAL: NDA REQUIRED
RF7413
3V WCDMA BAND 3 LINEAR PA MODULE
Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm
Features
HSDPA/HSUPA/HSPA+/LTE
High Efficiency WCDMA
Operation: 41% at
POUT=+28dBm
Low Voltage Positive Bias
Supply (3.0V to 4.2V)
Internal Voltage Regulator -
No External (VREF) Required
Two Mode Power/Gain States
with Digital Control Interface
Integrated Power Coupler
Integrated Blocking and
Decoupling Capacitors
Applications
WCDMA/HSPA+/LTE Wireless
Data Cards
WCDMA/HSPA+/LTE
Handsets
VBAT 1
RF IN 2
NC 3
VMODE 4
VEN 5
Bias Control &
PA/VMODE Enable
10 VCC
9 RF OUT
8 CPL IN
7 GND
6 CPL OUT
Functional Block Diagram
Product Description
The RF7413 is a high-power, high-efficiency, linear power amplifier
designed for use as the final RF amplifier in 3V, 50 WCDMA mobile cellu-
lar equipment and spread-spectrum systems. This PA is developed for
UMTS Band 3 which operates in the 1710MHz to 1785MHz frequency
band. The RF7413 has a digital control pin which enables a low power
mode to reduce amplifier gain at lower power levels. The part also has an
integrated directional coupler which eliminates the need for an external
discrete coupler at the output. The RF7413 (Band 3) meets the spectral
linearity requirements of High Speed Downlink Packet Access (HSDPA),
High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE)
data transmission. The RF7413 is assembled in a 10-pin, 3mm x 3mm
module.
Ordering Information
RF7413
3V WCDMA Band 3 Linear PA Module
RF7413PCBA-410 Fully Assembled Evaluation Board
DS111206
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
RF7413
VBAT
4.7uF
RF IN
VMODE1
VMODE0
VEN
Application Schematic
1
AMP
2
3 Bias Control
& PA/VMODE
4 Enable
5
10
9
RF OUT
10 nF (3)
8
7 50
6
CPL OUT
VCC
4.7uF (2)
NOTES:
(1). The 50 resistor should be removed if pin 8 is connected to another coupler for daisy chaining multiple couplers.
(2). This capacitance value can be reduced for multi-PA with DC to DC converter applications where a total maximum
capacitive load is required to be met. Keeping at least a 1uF capacitor close to the PA Vcc pin is recommended.
(3). A capacitor of at least 10 nF should be placed closed to the PA VCC pin (pin10) for optimum decoupling.
VCC1
C5
4.7uF
C7
10nF J1
RF IN
VMODE1
C9
10nF
P1_1
P1_2
P1_3
P1_4
P1_5
P1_6
P1_7
P1_8
P1_9
VMODE0
C10
10nF
VEN
VMODE0
VMODE1
VCC1
VCC2
VCC2S (1)
VEN
C11
10nF
Evaluation Board Schematic
1
AMP
2
3 Bias Control
& PA/VMODE
4 Enable
5
VCC2
10
9
J2
RF OUT
C8
10nF
C6
4.7uF
C4
22uF
8
R2
7 51
6
J3
CPL OUT
NOTES:
(1). VCC2S is a sense line to be used if the test power supply has voltage sensing
capability. This compensates for any resistive voltage drop that occurs between
the power supply and the PA and thus ensures that the voltage at the PA is set as
expected.
DS111206
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF7413.PDF ] | |
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