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PDF DMN2011UFDE Data sheet ( Hoja de datos )
| Número de pieza | DMN2011UFDE | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V
11mΩ @ VGS = 2.5V
ID max
TA = +25°C
11.7A
10.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch
• Power Management Functions
U-DFN2020-6
DMN2011UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• 0.6mm Profile – Ideal for Low Profile Applications
• PCB Footprint of 4mm2
• Low Gate Threshold Voltage
• Low On-Resistance
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2020-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
• Weight: 0.0065 grams (Approximate)
D
Pin1 G
ESD PROTECTED
Bottom View
Bottom View
Pin Out
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2011UFDE-7
DMN2011UFDE-13
Marking
N3
N3
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
N3 = Product Type Marking Code
N3 YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 7
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
September 2014
© Diodes Incorporated
1 page  
DMN2011UFDE
30
25
20 TA = 150°C
TA = 125°C
15
TA = 85°C
10 TA = 25°C
TA = -55°C
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
9
8
7
6
5
VDS = 10V
ID = 8.5A
4
3
2
1
0
0 10 20 30 40 50 60
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
10000
1000
f = 1MHz
Ciss
Coss
Crss
100
0
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
1000
RDS(on)
Limited
100
10
DC
1 PW = 10s
PW = 1s
PW = 100ms
TJ(max) = 150°C
0.1 TA = 25°C
VGS = 4.5V
PW = 10ms
PW = 1ms
PW = 100µs
Single Pulse
0.01 DUT on 1 * MRP Board
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
0.01 0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
RθJA(t) = r(t) * RθJA
RθJA = 207°C/W
Duty Cycle, D = t1/ t2
100 1000
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
5 of 7
www.diodes.com
September 2014
© Diodes Incorporated
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| PDF Descargar | [ Datasheet DMN2011UFDE.PDF ] | |
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