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Número de pieza | DMN1019USN | |
Descripción | 12V N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN1019USN (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
12V
RDS(ON) MAX
10mΩ @ VGS = 4.5V
12mΩ @ VGS = 2.5V
14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V
ID
TA = +25°C
9.3A
8.5A
7.9A
6.9A
4.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Load Switch
• DC-DC Converters
• Power Management Functions
SC59
DMN1019USN
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC59
• Case Material – Molded Plastic. UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208 e3
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
D
D
G
ESD PROTECTED
Top View
GS
Top View
Pin Configuration
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN1019USN-7
DMN1019USN-13
Case
SC59
SC59
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N7 = Product Type Marking Code
N7
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
2014
B
Feb Mar
23
2015
C
2016
D
Apr May Jun
456
2017
E
2018
F
Jul Aug Sep
78
9
2019
G
2020
H
Oct Nov Dec
OND
DMN1019USN
Document number: DS36999 Rev. 2 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
1 page 1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
DMN1019USN
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
RθJA(t) = r(t) * RθJA
RθJA = 60°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
G
H
K
N
J DL
M
SC59
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G - - 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75
α 0° 8° -
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
3.4
0.8
1.0
2.4
1.35
DMN1019USN
Document number: DS36999 Rev. 2 - 2
5 of 6
www.diodes.com
May 2014
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN1019USN.PDF ] |
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DMN1019USN | 12V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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