BLF6G22LS-40P Datasheet PDF - Ampleon
| Part Number | BLF6G22LS-40P | |
| Description | Power LDMOS transistor | |
| Manufacturers | Ampleon | |
| Logo |  |
|
|
There is a preview and BLF6G22LS-40P download ( pdf file ) link at the bottom of this page. Total 16 Pages | ||
Preview 1 page No Preview Available !
BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
410 28
13.5 19
30 30 [2]
1805 to 1880 [1] 410 28
5
20.3 18.3 34.9 [2]
1-carrier W-CDMA
2110 to 2170 410 28 15
19 32 37 [3]
1805 to 1880 [1] 410 28
5
20.5 18.0 42.3 [3]
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
|
| |
 
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
7.3 IS-95
Single carrier IS-95; PAR = 9.7 dB at 0.01 % probability on the CCDF.
22
Gp
(dB)
20
(1) (2) (3)
aaa-000329 50
ηD
(%)
40
-20
ACPR885
(dBc)
aaa-000330 -20
ACPR1980
(dBc)
Gp
18
-40
30 ACPR885
(1) (2) (3)
-40
16
ηD
14 (1) (2) (3)
20
10
12 0
28 32 36 40 44 48
PL (dBm)
VDS = 28 V; IDq = 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2.
Single carrier IS-95 power gain and drain
efficiency as function of output power; typical
values
-60 -60
ACPR1980
(1) (2) (3)
-80 -80
28 32 36 40 44 48
PL (dBm)
VDS = 28 V; IDq = 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 3.
Single carrier IS-95 adjacent channel power
ratio as a function of output power;
typical values
BLF6G22L-40P_6G22LS-40P#2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 16
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BLF6G22LS-40P electronic component. |
| Information | Total 16 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BLF6G22LS-40P.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| BLF6G22LS-40P | The function is Power LDMOS transistor. Ampleon | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
BLF6
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||