|
|
PDF BLF6G22L-40P Data sheet ( Hoja de datos )
| Número de pieza | BLF6G22L-40P | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | Ampleon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BLF6G22L-40P (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
410 28
13.5 19
30 30 [2]
1805 to 1880 [1] 410 28
5
20.3 18.3 34.9 [2]
1-carrier W-CDMA
2110 to 2170 410 28 15
19 32 37 [3]
1805 to 1880 [1] 410 28
5
20.5 18.0 42.3 [3]
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
1 page  
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
7.3 IS-95
Single carrier IS-95; PAR = 9.7 dB at 0.01 % probability on the CCDF.
22
Gp
(dB)
20
(1) (2) (3)
aaa-000329 50
ηD
(%)
40
-20
ACPR885
(dBc)
aaa-000330 -20
ACPR1980
(dBc)
Gp
18
-40
30 ACPR885
(1) (2) (3)
-40
16
ηD
14 (1) (2) (3)
20
10
12 0
28 32 36 40 44 48
PL (dBm)
VDS = 28 V; IDq = 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2.
Single carrier IS-95 power gain and drain
efficiency as function of output power; typical
values
-60 -60
ACPR1980
(1) (2) (3)
-80 -80
28 32 36 40 44 48
PL (dBm)
VDS = 28 V; IDq = 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 3.
Single carrier IS-95 adjacent channel power
ratio as a function of output power;
typical values
BLF6G22L-40P_6G22LS-40P#2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 16
5 Page 
9. Package outline
BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
D
SOT1121A
A
F
D1
U1
q
H1
12
B
C
c
H U2
p E1
E
5
A
w1 A B
34
b w2 C
e
Q
Dimensions
0 5 10 mm
scale
Unit(1)
A
b
c D D1 e E E1 F
H H1 p Q(2) q U1 U2 w1 w2
max 4.75 3.94 0.18 20.02 19.96
9.53 9.53 1.14 19.94 12.83 3.38 1.70
34.16 9.91
mm nom
8.89
27.94
0.25 0.51
min 3.45 3.68 0.10 19.61 19.66
9.27 9.27 0.89 18.92 12.57 3.12 1.45
33.91 9.65
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.133 0.067
1.345 0.39
inches nom
0.35
1.1 0.01 0.02
min 0.136 0.145 0.004 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.123 0.057
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121a_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
SOT1121A
09-10-12
10-02-02
Fig 12. Package outline SOT1121A
BLF6G22L-40P_6G22LS-40P#2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BLF6G22L-40P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BLF6G22L-40BN | Power LDMOS transistor | Ampleon |
| BLF6G22L-40P | Power LDMOS transistor | Ampleon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |