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Central Semiconductor - SILICON NPN TRANSISTORS

Numéro de référence BCX70
Description SILICON NPN TRANSISTORS
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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BCX70 fiche technique
BCX70 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX70 Series
types are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODES: BCX70G: AG
BCX70H: AH
BCX70J: AJ
BCX70K: AK
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
ΘJA
45
45
5.0
100
200
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
fT
Cc
Ce
NF
VCB=45V
VCB=45V, TA=150°C
VEB=4.0V
IC=10μA
IC=10mA
IE=1.0μA
IC=10mA, IB=250μA
IC=50mA, IB=1.25mA
IC=10mA, IB=250μA
IC=50mA, IB=1.25mA
VCE=5.0V, IC=2.0mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=200μA, RS=2.0kΩ,
f=1.0kHz, BW=200Hz
45
45
5.0
0.05
0.10
0.60
0.70
0.55
100
250
1.7
11
MAX
20
20
20
0.35
0.55
0.85
1.05
0.75
6.0
BCX70G
BCX70H
BCX70J
MIN MAX MIN MAX MIN MAX
hFE VCE=5.0V, IC=10μA
40 30
hFE
VCE=5.0V, IC=2.0mA
120 220 180 310 250 460
hFE
VCE=1.0V, IC=50mA
50
70
90
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
BCX70K
MIN MAX
100
380 630
100
R2 (20-November 2009)

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