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PDF 2N4410 Data sheet ( Hoja de datos )
| Número de pieza | 2N4410 | |
| Descripción | SILICON NPN TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N4410
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4410 is a small
signal NPN silicon transistor, manufactured by the
epitaxial planar process, designed for general purpose
amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
ΘJC
120
80
5.0
250
625
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
BVCBO
BVCEX
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
fT
Cob
Cib
VCB=100V
VCB=100V, TA=100°C
VEB=4.0V
IC=10μA
VBE=5.0V, IC=500μA, RBE=8.2kΩ
IC=1.0mA
IE=10μA
IC=1.0mA, IB=100μA
IC=1.0mA, IB=100μA
VCE=5.0V, IC=1.0mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=10V, IC=10mA, f=20MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
120
120
80
5.0
60
60
60
MAX
10
1.0
100
200
800
800
400
300
12
50
UNITS
V
V
V
mA
mW
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
mV
mV
mV
MHz
pF
pF
R0 (18-October 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4410.PDF ] | |
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