DataSheetWiki


2N4232A fiches techniques PDF

Central Semiconductor - SILICON TRANSISTORS

Numéro de référence 2N4232A
Description SILICON TRANSISTORS
Fabricant Central Semiconductor 
Logo Central Semiconductor 





1 Page

No Preview Available !





2N4232A fiche technique
2N4231A 2N4232A 2N4233A NPN
2N6312 2N6313 2N6314 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312
series devices are complementary silicon power
transistors, manufactured by the epitaxial base process,
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
2N4231A 2N4232A 2N4233A
SYMBOL 2N6312 2N6313 2N6314
VCBO
40
60
80
VCEO
40
60
80
VEBO
5.0
IC 5.0
ICM 10
IB 2.0
PD 75
TJ, Tstg
-65 to +200
JC
2.32
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEO
VCE=30V (2N4231A, 2N6312)
ICEO
VCE=50V (2N4232A, 2N6313)
ICEO
VCE=70V (2N4233A, 2N6314)
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=100mA, (2N4231A, 2N6312)
40
BVCEO IC=100mA, (2N4232A, 2N6313)
60
BVCEO IC=100mA, (2N4233A, 2N6314)
80
VCE(SAT) IC=1.5A, IB=0.15A
VCE(SAT) IC=3.0A, IB=0.3A
VCE(SAT) IC=5.0A, IB=1.25A
VBE(ON) VCE=2.0V, IC=1.5A
hFE VCE=2.0V, IC=0.5A
40
hFE VCE=2.0V, IC=1.5A
25
hFE VCE=2.0V, IC=3.0A
10
hFE VCE=4.0V, IC=5.0A
4.0
hfe VCE=10V, IC=0.5A, f=1.0kHz
20
fT VCE=10V, IC=0.5A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=100kHz
MAX
50
1.0
1.0
1.0
0.1
1.0
0.5
0.7
2.0
4.0
1.4
100
300
UNITS
μA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
R1 (2-September 2014)

PagesPages 2
Télécharger [ 2N4232A ]


Fiche technique recommandé

No Description détaillée Fabricant
2N4232 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package Seme LAB
Seme LAB
2N4232 Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-66 Sleeve New Jersey Semiconductor
New Jersey Semiconductor
2N4232A POWER TRANSISTORS(5A/75W) Mospec Semiconductor
Mospec Semiconductor
2N4232A COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS Boca Semiconductor Corporation
Boca Semiconductor Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche