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PDF 2N4124 Data sheet ( Hoja de datos )
| Número de pieza | 2N4124 | |
| Descripción | SILICON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N4123 2N4124 NPN
2N4125 2N4126 PNP
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4123 series
devices are complementary silicon small signal
transistors manufactured by the epitaxial planar
process designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N4123 2N4124 2N4125 2N4126
Collector-Base Voltage
VCBO 40 30 30 25
Collector-Emitter Voltage
VCEO 30 25 30 25
Emitter-Base Voltage
VEBO 5.0 5.0 4.0 4.0
Continuous Collector Current
IC 200
Power Dissipation
PD 625
Power Dissipation (TC=25°C)
PD 1.5
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
Thermal Resistance
JA 200
Thermal Resistance
JC
83.3
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4123
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=20V
- 50
IEBO
VEB=3.0V
- 50
BVCBO IC=10μA
40 -
BVCEO IC=1.0mA
30 -
BVEBO IE=10μA
5.0 -
VCE(SAT) IC=50mA, IB=5.0mA
- 0.3
VBE(SAT) IC=50mA, IB=5.0mA
- 0.95
hFE VCE=1.0V, IC=2.0mA
50 150
hFE VCE=1.0V, IC=50mA
25 -
hfe
VCE=10V, IC=2.0mA, f=1.0kHz
50 200
fT VCE=20V, IC=10mA, f=100MHz 250 -
Cob VCB=5.0V, IE=0, f=100kHz
- 4.0
Cib VEB=0.5V, IC=0, f=100kHz
- 8.0
NF VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
- 6.0
2N4124
MIN MAX
- 50
- 50
30 -
25 -
5.0 -
- 0.3
- 0.95
120 360
60 -
120 480
300 -
- 4.0
- 8.0
- 5.0
2N4125
MIN MAX
- 50
- 50
30 -
30 -
4.0 -
- 0.4
- 0.95
50 150
25 -
50 200
200 -
- 4.5
- 10
- 5.0
2N4126
MIN MAX UNITS
- 50 nA
- 50 nA
25 -
V
25 -
V
4.0 -
V
- 0.4 V
- 0.95 V
120 360
60 -
120 480
250 - MHz
- 4.5 pF
- 10 pF
- 4.0 dB
R1 (12-January 2016)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N4124.PDF ] | |
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