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PDF MBR20200CT-Y Data sheet ( Hoja de datos )
| Número de pieza | MBR20200CT-Y | |
| Descripción | Dual Common Cathode Schottky Rectifier | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR20200CT-Y (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MBR2035CT-Y thru MBR20200CT-Y
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
TO-220AB
Terminal: Matte tin plated leads, solderable per JESD22-B106
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200
CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y CT-Y
UNIT
Marking code
MBR
2035
CT
MBR
2045
CT
MBR
2050
CT
MBR
2060
CT
MBR
2090
CT
MBR
20100
CT
MBR
20150
CT
MBR
20200
CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
VRRM 35 45 50 60 90 100 150 200 V
VRMS 24 31 35 42 63 70 105 140 V
VDC 35 45 50 60 90 100 150 200 V
IF(AV) 20 A
IFRM 20 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25℃
IF=10A, TJ=125℃
IF=20A, TJ=25℃
IF=20A, TJ=125℃
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1 0.5 A
- 0.80 0.85 0.99
0.57 0.70 0.75 0.87 V
0.84 0.95 0.95 1.23
0.72 0.85 0.85 1.10
0.1
mA
15 10
5 0.15
10000
V/μs
1.0 2.0
- 55 to +150
- 55 to +150
OC/W
OC
OC
Document Number: DS_D1405043
Version:A14
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBR20200CT-Y.PDF ] | |
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