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PDF MBR1650 Data sheet ( Hoja de datos )

Número de pieza MBR1650
Descripción Schottky Barrier Rectifier ( Diode )
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! MBR1650 Hoja de datos, Descripción, Manual

MBR1635 thru MBR16150
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Schottky Barrier Rectifier
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.86 g (approximately)
TO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
MBR MBR MBR MBR MBR MBR MBR
SYMBOL
1635 1645 1650 1660 1690 16100 16150
Maximum repetitive peak reverse voltage
VRRM 35 45 50 60 90 100 150
Maximum RMS voltage
Maximum DC blocking voltage
VRMS 24 31 35 42 63 70 105
VDC 35 45 50 60 90 100 150
Maximum average forward rectified current
IF(AV)
16
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
32
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=16A, TJ=25
IF=16A, TJ=125
IRRM
1.0
VF 0.63
0.57
0.5 A
0.75 0.85 0.95 V
0.65 0.75 0.92
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
TJ
TSTG
0.5
15
0.5
10
10000
3
- 55 to +150
- 55 to +150
0.3
7.5
0.1 mA
5
V/μs
OC/W
OC
OC
Document Number: DS_D1308053
Version: J13

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