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PDF MBD4448HTW Data sheet ( Hoja de datos )
| Número de pieza | MBD4448HTW | |
| Descripción | Switching Diode | |
| Fabricantes | Taiwan Semiconductor | |
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Small Signal Product
MBD4448HAQW/HADW/HCDW/HSDW/HTW
Taiwan Semiconductor
Switching Diode
FEATURES
- Fast switching speed
- Surface device type mounting
- Moisture sensitivity level 1
- High conductance power dissipation
- For general purpose switching applications
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-363 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
SOT-363
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
Reverse Voltage
VRRM
VR
80
57
Average Rectified Forward Current
IF(AV)
500
Average Rectified Output Current
IO 250
Non-Repetitive Peak Forward Surge Current
@ t = 1 μs
@t=1s
IFSM
4
1.5
Thermal Resistance (Junction to Ambient)
RθJA
625
Junction and Storage Temperature Range
TJ , TSTG
-55 to 150
PARAMETER
Reverse Breakdown Voltage
IR=100μA
IF=5.0mA
Forward Voltage
IF=10mA
IF=100mA
IF=150mA
VR=70V
Reverse Leakage Current
VR=75V,
VR=25V,
VR=20V
TJ=150oC
TJ=150oC
Junction Capacitance
VR=6V, f=1MHz
Reverse Recovery Time
IF=5mA, VR=6V
Note 1: Device mounted on FR-4 PCB, 1 inch × 0.85 inch × 0.062 inch
Note 2: Short duration test pulse uesd tu minimize self-heating effect
SYMBOL
V(BR)
VF
VF
CJ
trr
MIN
80
0.620
-
-
-
-
-
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
100
50
30
25
3.5
4.0
UNIT
mW
V
V
mA
mA
A
oC/W
oC
UNIT
V
V
nA
μA
μA
nA
pF
ns
Document Number: DS_S1501009
Version: C15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBD4448HTW.PDF ] | |
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