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Numéro de référence | D750 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | INCHANGE | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD750
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·High Current Capability
APPLICATIONS
·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
7V
15 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
30 A
100 W
150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ D750 ] |
No | Description détaillée | Fabricant |
D750 | Silicon NPN Power Transistor | INCHANGE |
D750 | Si NPN Transistor | Panasonic |
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D75004CU | UPD75004CU | NEC |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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