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IRFH7182PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFH7182PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFH7182PBF fiche technique
VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
100
3.9
49
0.9
157
V
m
nC

A
 
Applications
 Optimized for Secondary Side Synchronous Rectification
 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
 Hot Swap and Active O-Ring
 BLDC Motor Drive
FastIRFET™
IRFH7182PbF
HEXFET® Power MOSFET
 
PQFN 5X6 mm
Features
Low RDS(ON) (<3.9m)
Low Thermal Resistance to PCB (<0.64°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
 
IRFH7182PbF
 
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7182TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 8
 
Max.
± 20
23
157
99
320
4.0
195
0.03
-55 to + 150
 
Units
V
A
W
W/°C
°C
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April 29, 2015

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