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PDF IRFBA1404PPBF Data sheet ( Hoja de datos )

Número de pieza IRFBA1404PPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 95903A
IRFBA1404PPbF
Typical Applications
l Industrial Motor Drive
HEXFET® Power MOSFET
D VDSS = 40V
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Increase Current Handling Capability
l 175°C Operating Temperature
l Fast Switching
l Dynamic dv/dt Rating
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating tempera-
ture, fast switching speed and improved ruggedness in single and repetitive
avalanche. The Super-220 TM is a package that has been designed to have the
same mechanical outline and pinout as the industry standard TO-220 but can
house a considerably larger silicon die. The result is significantly increased
current handling capability over both the TO-220 and the much larger TO-247
package. The combination of extremely low on-resistance silicon and the
Super-220 TM package makes it ideal to reduce the component count in
multiparalled TO-220 applications, reduce system power dissipation, upgrade
existing designs or have TO-247 performance in a TO-220 outline.
These benefits make this design an extremely efficient and reliable device for
use in a wide variety of applications.
RDS(on) = 3.7m
ID = 206A†
S
Super-220™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
www.irf.com
Recommended clip force
Max.
206†
145†
650
300
2.0
± 20
480
See Fig.12a, 12b, 14, 15
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
09/22/10

1 page




IRFBA1404PPBF pdf
IRFBA1404PPbF
240
LIMITED BY PACKAGE
180
120
60
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5

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