NSBA144WF3 Datasheet PDF - ON Semiconductor
| Part Number | NSBA144WF3 | |
| Description | Digital Transistors | |
| Manufacturers | ON Semiconductor | |
| Logo |  |
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MUN2137, MMUN2137L,
MUN5137, DTA144WE,
DTA144WM3, NSBA144WF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 22 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
XM 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 3
1
Publication Order Number:
DTA144W/D
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MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3
TYPICAL CHARACTERISTICS
MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3
1 1000
TA = −25°C
75°C
0.1 100
75°C
TA = −25°C
25°C
0.01
0
25°C
IC/IB = 10
5 10 15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
10
1
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
10 100
9 f = 10 kHz
75°C
8
IE = 0 A
TA = 25°C
10
TA = −25°C
7
6 1 25°C
5
4 0.1
3
2
0.01
VO = 5 V
1
0
0 10
0.001
20 30 40 50
0 1 2 3 4 5 6 7 8 9 10 11
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
VO = 0.2 V
10
TA = −25°C
75°C
25°C
1
05
10 15 20 25
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
www.onsemi.com
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| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NSBA144WF3.PDF Datasheet ] | |
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