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PDF TGA2627-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2627-SM | |
| Descripción | GaN Driver Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• Commercial and Military Radar
• Communications
• Electronic Warfare (EW)
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 6 - 12 GHz
• Push-Pull Configuration
• Low Harmonic Content; ≤ -40 dBc at Psat
• Small Signal Gain: > 27 dB
• Power: > 32 dBm
• PAE: > 15 %
• IM3: < -20 dBc
• Input Return Loss > 15 dB
• Output Return Loss > 10 dB
• Bias: VD = 25 V, IDQ = 200 mA
• Package Dimensions: 5.0 x 5.0 x 1.42 mm
General Description
TriQuint's TGA2627-SM is a push-pull driver amplifier
fabricated on TriQuint's TQGaN25 0.25um GaN on SiC
production process. The TGA2627-SM operates from 6
to 12 GHz and provides 32 dBm of output power with 18
dB of large signal gain and greater than 20 % power-
added efficiency. The push-pull topology yields > 40dB
of harmonic suppression at Psat.
Using GaN MMIC technology and air-cavity ceramic
QFN packaging, the TGA2627-SM provides a low cost
driver solution that provides the added benefit of
operating on the same voltage rail as the corresponding
GaN HPA. It can also serve as the output power
amplifier on lower power architectures.
The TGA2627-SM is offered in a 5x5 mm air-cavity QFN
with an aluminum nitride base and LCP lid. It is well-
matched to 50 ohms and includes integrated DC
blocking caps on both RF ports allowing for simple
system integration.
Lead-Free & RoHS compliant.
Evaluation Boards are available on request.
Functional Block Diagram
Pad Configuration
Pad Number
1-4, 6-9,11, 13, 15-19, 21-26, 28,
30, 32
5
10, 31
12, 29
14, 27
20
Symbol
GND
RF Input
VG12
VD
VG3
RF Output
Ordering Information
Part ECCN
TGA2627-SM
EAR99
Description
6 -12 GHz GaN
Driver Amplifier
Preliminary Datasheet: Rev - 09-05-14
© 2014 TriQuint
- 1 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Typical Performance
Test conditions, unless otherwise noted: T = 25 °C, part mounted to EVB (page 11)
0 Output Return Loss vs. Frequency vs. IDQ
VD = 25 V, Temp. = 25 °C
-5
-10
-15
-20
100 mA
-25 150 mA
200 mA
-30
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
34
32
30
28
26
24
22
20
4
Gain vs. Frequency vs. VD
Temp. = 25 °C, IDQ = 200 mA
20 V
25 V
30 V
5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
0 Input Return Loss vs. Frequency vs. VD
Temp. = 25 °C, IDQ = 200 mA
-5
-10
-15
-20
-25
-30
4
20 V
25 V
30 V
56
7 8 9 10 11 12 13 14
Frequency (GHz)
0 Output Return Loss vs. Frequency vs. VD
Temp. = 25 °C, IDQ = 200 mA
-5
-10
-15
-20
20 V
-25 25 V
30 V
-30
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
Preliminary Datasheet: Rev - 09-05-14
© 2014 TriQuint
- 5 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Applications Information
Evaluation Board Layout
RF Layer is 0.008” thick Rogers Corp.
RO4003C, εr = 3.38. Metal layers are 0.5 oz.
copper. The microstrip line at the connector
interface is optimized for the Southwest
Microwave end launch connector 1092-02A-
5.
The pad pattern shown has been developed
and tested for optimized assembly at
TriQuint Semiconductor. The PCB land
pattern has been developed to
accommodate lead and package tolerances.
Since surface mount processes vary from
company to company, careful process
development is recommended.
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Bill of Materials
Ref. Designation
C1 – C4, C7, C8
C5, C6, C9, C10
R1 – R4, R7, R8
R5, R6, R9, R10
Value
0.01 pF
1.0 uF
5.1 Ohms
0.0 Ohms
Description
Cap., 50V, 10% X7R, 0402 case
Cap., 50V, 10% X5R, 1206 case
Resistor, 0402 case
Resistor, 0402 case
Manufacturer
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev - 09-05-14
© 2014 TriQuint
- 11 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet TGA2627-SM.PDF ] | |
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