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TriQuint Semiconductor - GaN Power Amplifier

Numéro de référence TGA2625-CP
Description GaN Power Amplifier
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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TGA2625-CP fiche technique
Applications
Radar
Communications
TGA2625-CP
10 to 11 GHz, 17 W GaN Power Amplifier
Product Features
Frequency Range: 10 11 GHz
Pout: 42.5 dBm (at PIN = 15 dBm)
PAE: > 40 %
Power Gain: 28 dB (at PIN = 15 dBm)
Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical,
pulsed (PW = 100 µs, DC = 10 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1
2
3
4
5
10
9
8
7
6
General Description
TriQuint’s TGA2625-CP is a packaged high-power
X-Band amplifier fabricated on TriQuint’s TQGaN25
0.25 um GaN on SiC process. Operating from 10 to
11 GHz, the TGA2625-CP achieves 42.5 dBm saturated
output power, a power-added efficiency of > 40 %, and
power gain of 28 dB.
The TGA2625-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under CW and pulsed conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2625-CP is ideally suited for both commercial
and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2625-CP
ECCN Description
3A001.b.2.b
10 11 GHz, 17 W
GaN Power Amplifier
Preliminary Datasheet: 11-03-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com

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