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TriQuint Semiconductor - GaN Power Amplifier

Numéro de référence TGA2622-CP
Description GaN Power Amplifier
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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TGA2622-CP fiche technique
Applications
Weather and Marine Radar
TGA2622-CP
9 10 GHz 35 W GaN Power Amplifier
Product Features
Frequency Range: 9 10 GHz
PSAT: 45.5 dBm @ PIN = 18 dBm
PAE: >43% @ PIN = 18 dBm
Power Gain: 27.5 dB @ PIN = 18 dBm
Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical
(Pulsed VD: PW = 100 us and DC = 10 %)
Package Dimensions: 15.2 x 15.2 x 3.5 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1 10
29
38
47
56
General Description
TriQuint’s TGA2622-CP is a packaged, high power X-
band amplifier fabricated on TriQuint’s TQGaN25 0.25 um
GaN on SiC production process. Operating from 9 10
GHz, the TGA2622-CP achieves 35 W saturated output
powers, a power-added efficiency of greater than 43 %,
and power gain of 27.5 dB.
The TGA2622-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages and
performs well under both pulsed and CW conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2622-CP is ideally suited for both commercial
and defense applications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RF In
VD
RF Out
Ordering Information
Part
TGA2622-CP
ECCN Description
3A001.b.2.b
9 10 GHz 35 W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com

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