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PDF HBT169M Data sheet ( Hoja de datos )
| Número de pieza | HBT169M | |
| Descripción | THYRISTORS | |
| Fabricantes | KERSEMI | |
| Logotipo |  |
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HBT169M
THYRISTORS
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended
for use in general purpose switching and phase control applications. These
devices are intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
Quick Reference Data
Symbol
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
Parameter
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Pin Configuration
Pin Description
1 Gate
2 Anode
3 Cathode
123
Limtiing Values
Symbol
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Parameter
Repetitive peak off-state voltages
Average on-state current (half sine wave; Tlead≤83°C)
RMS on-state current (all conduction angles)
Non-repetitive peak on-state current (t=10ms)
Non-repetitive peak on-state current (t=8.3ms)
I2t for fusing (t=10ms)
Repetitive rate of rise of on-state current after triggering
(ITM=2A; IG=10mA; dIG/dt=100mA/us)
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power (over any 20ms period)
Storage temperature
Operating junction temperature
SOT-89
Max.
400
0.5
0.8
8
Unit
V
A
A
A
Symbol
A
K
G
Min. Max. Units
- 400 V
- 0.5 A
- 0.8 A
- 8A
- 9A
- 0.32 A2S
- 50 A/us
- 1A
- 5V
5V
- 2W
- 0.1 W
- 150 °C
- 125 °C
www.kersemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HBT169M.PDF ] | |
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