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PDF TGA2621 Data sheet ( Hoja de datos )
| Número de pieza | TGA2621 | |
| Descripción | GaAs Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Commercial and Military Radar
Satellite Communications
TGA2621
16 - 18 GHz 1 W GaAs Power Amplifier
Product Features
Frequency Range: 16 - 18 GHz
Psat: 30.5 dBm at Pin = 10 dBm
PAE: 28 % at Pin = 10 dBm
Small Signal Gain: 26.5 dB
Input Return Loss: > 13 dB
Bias: VD = 6 V, IDQ = 400 mA, VG = -0.6 V Typical
Chip Dimensions: 2.0 x 2.5 x 0.1 mm
Functional Block Diagram
2 34
15
General Description
TriQuint’s TGA2621 is a Ku-band Power Amplifier
fabricated on TriQuint’s TQPHT15 0.15 μm GaAs
pHEMT process. The TGA2621 operates from 16 to 18
GHz and typically provides 1 W of saturated output
power with an efficiency of 28% PAE and 26.5 dB of
small signal gain.
The TGA2621 is well suited to support both radar and
satellite communications as a driver or low power
amplifier.
Both RF ports have intergrated DC blocking caps and
are fully matched to 50 ohms allowing for simple
system integration.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
Symbol
RFIN
VG
VD1
VD2
RFOUT
Ordering Information
Part
TGA2621
ECCN Description
EAR99
16 - 18 GHz GaAs PA
Preliminary Datasheet: Rev - 12-30-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2621
16 - 18 GHz 1 W GaAs Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 6 V, IDQ = 400 mA, VG = -0.6 V Typical, CW
Output Power vs. Input Power vs. Freq.
33
Output Power vs. Input Power vs. Temp.
33
30 30
27 27
24
21
18
15
-10
16 GHz
17 GHz
18 GHz
Temp = 25 °C
-5 0 5
Input Power (dBm)
10
24
21
18
15
-10
25 °C
85 °C
Freq = 17 GHz
-5 0 5
Input Power (dBm)
10
33 Output Power vs. Input Power vs. VD
30
27 5.5 V
6.0 V
24 6.5 V
21
18
15
-10
Temp = 25 °C
-5 0 5
Input Power (dBm)
10
32 PSAT vs. Frequency vs. Temperature
31
30
29
25 °C
28 85 °C
27
26
25
15.0
PIN = 10 dBm
16.0
17.0
18.0
Frequency (GHz)
19.0
32 PSAT vs. Frequency vs. Drain Voltage
31
30
29 5.5 V
6.0 V
28 6.5 V
27
26
25
15.0
16.0
PIN = 10 dBm, Temp = 25 °C
17.0 18.0
Frequency (GHz)
19.0
32 PSAT vs. Frequency vs. Drain Current
31
30
29 350 mA
400 mA
28 450 mA
27
26
25
15.0
16.0
PIN = 10 dBm, Temp = 25 °C
17.0 18.0
Frequency (GHz)
19.0
Preliminary Datasheet: Rev - 12-30-14
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Mechanical Information
TGA2621
16 - 18 GHz 1 W GaAs Power Amplifier
Units: millimeters
Thickness: 0.10
Die x,y size tolerance: ± 0.050
Ground is backside of die
RFIN and RFOUT pads are symmetric
Pad Description
Pad No. Symbol Description
1 RFIN Input; matched to 50 Ω; DC blocked
2 VG
Gate voltage; bias network is required; see recommended Application
3,4
VD1 (1)
IDnrfaoirnmvaotilotangaeb; obviaes. network is required; see recommended Application
5
VD2 (1)
IDnrfaoirnmvaotilotangaeb; obviaes. network is required; see recommended Application
6
RFOUT
IOnufotprmuta; tmioantcahbeodveto. 50 Ω; DC blocked
Notes:
1. Pads 3,4, & 5 may be tied together off-chip.
Pad Size
0.1 x 0.2 mm
0.1 x 0.1 mm
0.1 x 0.1 mm
0.2 x 0.1 mm
0.1 x 0.2 mm
Preliminary Datasheet: Rev - 12-30-14
© 2014 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2621.PDF ] | |
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