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PDF TGA2599-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2599-SM | |
| Descripción | GaN Driver Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• C-Band Radar
• Communications
TGA2599-SM
5.0-8.0 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 5.0-8.0 GHz
• Small Signal Gain: > 23 dB
• Power: > 33 dBm
• PAE: > 34%
• IM3: -25 dBc
• Bias: VD = 25 V, IDQ = 50 mA
• Package Dimensions: 4.0 x 4.0 x 0.85 mm
Functional Block Diagram
General Description
TriQuint's TGA2599-SM is a packaged driver
amplifier fabricated on TriQuint's TQGaN25 0.25um
GaN on SiC production process. The TGA2599-SM
operates from 5.0 to 8.0GHz and provides 33 dBm
of output power with 15 dB of large signal gain and
34 % power-added efficiency.
Using GaN MMIC technology and plastic
packaging, the TGA2599-SM provides a low cost
driver solution that provides the added benefit of
operating on the same voltage rail as the
corresponding GaN HPA. It can also serve as the
primary amplifier on lower power architectures.
The TGA2599 is offered in a small 4 x 4 mm plastic
overmold QFN, fully matched to 50 ohms and
includes integrated DC blocking caps on both RF
ports allowing for simple system integration.
Lead-Free & RoHS compliant.
Evaluation Boards are available on request.
Pad Configuration
Pad Number
3
6
8
13
17
19
1-2,4-5,7,9-12,14-16,18, 20, 21
Symbol
RF Input
VG1
VG2
RF Output
VD2
VD1
GND
Ordering Information
Part
TGA2599-SM
ECCN
EAR99
Description
5.0-8.0 GHz GaN
Driver Amplifier
Preliminary Datasheet: Rev–A 02-20-15
© 2014 TriQuint
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
Typical Performance
35 Gain vs. Freq. vs. IDQ
VD = 25 V, T = 25 °C
30
25
20
15
10
50 mA
5 100 mA
150 mA
0
4 5 6 7 8 9 10 11 12
Frequency (GHz)
TGA2599-SM
5.0-8.0 GHz GaN Driver Amplifier
0
-5
-10
-15
-20
-25
-30
4
Input Return Loss vs. Freq. vs. IDQ
VD = 25 V, T = 25 °C
50 mA
100 mA
150 mA
5 6 7 8 9 10 11 12
Frequency (GHz)
0
-5
-10
-15
-20
-25
-30
4
Output Return Loss vs. Freq. vs. IDQ
VD = 25 V, T = 25 °C
50 mA
100 mA
150 mA
5 6 7 8 9 10 11 12
Frequency (GHz)
Preliminary Datasheet: Rev–A 02-20-15
© 2014 TriQuint
- 5 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Applications Information
Evaluation Board Layout
RF Layer is 0.008” thick Rogers Corp.
RO4003C, εr = 3.38. Metal layers are 0.5 oz.
copper. The microstrip line at the connector
interface is optimized for the Southwest
Microwave end launch connector 1092-02A-
5.
The pad pattern shown has been developed
and tested for optimized assembly at
TriQuint Semiconductor. The PCB land
pattern has been developed to
accommodate lead and package tolerances.
Since surface mount processes vary from
company to company, careful process
development is recommended.
TGA2599-SM
5.0-8.0 GHz GaN Driver Amplifier
Bill of Materials
Ref. Designation
C1 – C4
C5 – C6
R1 – R4
R5 – R6
Value
0.01 uF
1.0 uF
0.0 Ohms
5.1 Ohms
Description
Cap., 50V, 10% X7R, 0402 case
Cap., 50V, 10% X5R, 1206 case
Resistor, 0402 case
Resistor, 0402 case
Manufacturer
Various
Various
Various
Various
Part Number
Preliminary Datasheet: Rev–A 02-20-15
© 2014 TriQuint
- 11 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet TGA2599-SM.PDF ] | |
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