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PDF TGA2598 Data sheet ( Hoja de datos )
| Número de pieza | TGA2598 | |
| Descripción | GaN Driver Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Commercial and military radar
Communications
Electronic Warfare (EW)
TGA2598
6 – 12GHz 2W GaN Driver Amplifier
Product Features
Frequency Range: 6 – 12GHz
PSAT: >33dBm
PAE: >31%
Small Signal Gain: >21dB
Input Return Loss: >9dB
Output Return Loss: >11dB
Bias: VD = 25V, IDQ = 100mA, VG = -2.6V Typical
Chip Dimensions: 2.14 x 1.11 x 0.10 mm
Functional Block Diagram
23
14
65
General Description
TriQuint’s TGA2598 is a broadband MMIC driver
amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 6-12GHz,
the TGA2598 provides more than 33dBm of saturated
output power and 21dB of small signal gain while
achieving more than 31% power-added efficiency.
The TGA2598 is an ideal choice to drive TriQuint’s high
performing x-band GaN HPAs allowing the user to run
both driver and HPA off the same voltage rail.
Fully matched to 50Ω with integrated DC blocking
capacitors on both I/O ports, the TGA2598 is ideally
suited for both military and commercial radar and
communications applications .
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
Symbol
RF In
VD1
VD2
RF Out
VG2
VG1
Ordering Information
Part
TGA2598
ECCN Description
3A001.b.2.b
6 – 12GHz 2W GaN
Driver Amplifier
Preliminary Datasheet: Rev - 07-11-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
Typical Performance (Large Signal)
Output Power vs. Frequency vs. VD
38
36 Temp. = +25 C
PIN = 19dBm
34
32
30
28
26 Vd=10V
24
22
20
18
5
Vd=15V
Vd=20V
Vd=25V
Vd=30V
67
IDQ = 100mA
8 9 10 11 12 13
Frequency (GHz)
TGA2598
6 – 12GHz 2W GaN Driver Amplifier
PAE vs. Frequency vs. VD
50
45 PIN = 19dBm
40
35
30
25
20
15
10
5 Temp. = +25 C
0
567
Vd=10V
Vd=15V
Vd=20V
Vd=25V
Vd=30V
89
IDQ = 100mA
10 11 12
13
Frequency (GHz)
Output Power vs. Freq vs. Input Power
36
Temp. = +25 C
35
VD = 25V, IDQ = 100mA
34
33
32
31 16dBm
17dBm
30 18dBm
29 19dBm
20dBm
28
5 6 7 8 9 10 11 12 13
Frequency (GHz)
50
45
40
35
30
25
20
15
10
5
0
5
PAE vs. Freq vs. Input Power
Temp. = +25 C
16dBm 17dBm 18dBm 19dBm 20dBm
VD = 25V, IDQ = 100mA
6 7 8 9 10 11 12 13
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
36
35 PIN = 19dBm
34
33
32
31
30
29
28
5
-40C
+25C
+85C
VD = 25V, IDQ = 100mA
6 7 8 9 10 11 12 13
Frequency (GHz)
PAE vs. Frequency vs. Temperature
50
45 PIN = 19dBm
40
35
30
25
20 -40C
15 +25C
10 +85C
5 VD = 25V, IDQ = 100mA
0
5 6 7 8 9 10 11 12 13
Frequency (GHz)
Preliminary Datasheet: Rev - 07-11-14
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2598
6 – 12GHz 2W GaN Driver Amplifier
Mechanical Drawing & Bond Pad Description
2
1
6
3
4
5
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad
1
2
3
4
5
6
Symbol
RF In
VD1
VD2
RF Out
VG2
VG1
Pad Size
0.096 x 0.196
0.113 x 0.072
0.104 x 0.072
0.096 x 0.196
0.072 x 0.098
0.072 x 0.098
Description
Input; matched to 50 ohms; DC blocked.
Drain voltage 1, bias network is required; see Application Circuit on page
9 as an example
Drain voltage 2, bias network is required; see Application Circuit on page
9 as an example.
Output; matched to 50 ohms; DC blocked.
Gate voltage 2, bias network is required; see Application Circuit on page 9
as an example.
Gate voltage 1, bias network is required; see Application Circuit on page 9
as an example.
Preliminary Datasheet: Rev - 07-11-14
© 2014 TriQuint
- 11 of 13 -
10 as an exampl
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2598.PDF ] | |
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