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PDF TGA2595-CP Data sheet ( Hoja de datos )
| Número de pieza | TGA2595-CP | |
| Descripción | 8W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Satellite Communications
TGA2595-CP
27.5 to 31 GHz, 8 W GaN Power Amplifier
Product Features
Frequency Range: 27.5 - 31 GHz
Pout: 39 dBm (PIN = 18 dBm)
PAE: > 22 % (PIN = 18 dBm)
Power Gain: 21 dB (PIN = 18 dBm)
IM3 @ 30 dBm/Tone = −27 dBc
IM5 @ 30 dBm/Tone = −46 dBc
Bias: VD = 20 V, IDQ = 560 mA, VG = −2.5 V typical
Package Dimensions: 15.2 x 15.2 x 5.2 mm
Package base is pure Cu offering superior thermal
management
Functional Block Diagram
1
2
3
4
5
10
9
8
7
6
General Description
TriQuint’s TGA2595-CP is a balanced Ka-Band power
amplifier fabricated on TriQuint’s TQGaN15 0.15 um
GaN on SiC process. The balanced configuration
supports low return loss and improves robustness into
non-ideal loads. Operating from 27.5 to 31 GHz, the
TGA2595-CP achieves 39 dBm saturated output power
with power-added efficiency of > 22 % and power gain of
21 dB.
The TGA2595-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. To simply system integration, the
TGA2595-CP is fully matched to 50 ohms with integrated
DC blocking capacitors on both I/O ports.
The TGA2595-CP is ideally suited for both commercial
and defense satellite communications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2595-CP
ECCN Description
3A001.b.2.c
27.5 - 31 GHz, 8 W
GaN Power Amplifier
Preliminary Datasheet: 01-22-15
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2595-CP
27.5 to 31 GHz, 8 W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 20 V, IDQ = 560 mA, VG = -2.5 V typical, CW.
28 PAE vs. Frequency vs. IDQ
Pin = 18 dBm,
Temp = 25 C
26
24
280 mA
22 420 mA
560 mA
20
18
16
27
28 29 30 31
Frequency (GHz)
32
22.5 Power Gain vs. Frequency vs. IDQ
22.0
Pin = 18 dBm,
Temp = 25 C
21.5
21.0
20.5
20.0
280 mA
420 mA
560 mA
19.5
19.0
27
28 29 30 31
Frequency (GHz)
32
PAE vs. Freq. vs. Temp.
28
TPeinm=p1=8 2d5Bm°C
26
24
22
20 -40 °C
25 °C
18 85 °C
16
27
28 29 30 31
Frequency (GHz)
32
Power Gain vs. Freq. vs. Temp.
22.5
Pin = 18 dBm
22.0
21.5
21.0
20.5
20.0
19.5
-40 °C
25 °C
85 °C
19.0
27
28 29 30 31
Frequency (GHz)
32
PAE vs. Input Power vs. Temp.
28
Frequency = 29 GHz
24
20
16
12
-40 °C
8 25 °C
85 °C
4
0
-12 -8 -4 0 4 8 12 16 20 24
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
38
Frequency = 29 GHz
34
30
26
22 -40 °C
25 °C
85 °C
18
14
-12 -8 -4 0 4 8 12 16 20 24
Input Power (dBm)
Preliminary Datasheet: 01-22-15
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Evaluation Board
GND
C3
C2
TGA2595-CP
27.5 to 31 GHz, 8 W GaN Power Amplifier
Vg VD
GND
C12
C11
C5
C6
GND
C8
C9
GND
Vg VD
PCB NOTES:
(1) Both Top and Bottom Vd and Vg must be biased.
(2) This PCB is non-standard, and requires PCB trace modification for 30GHz performance optimization. See
Gerber files for detailed information.
Bill of Material
Reference Des.
C2, C5, C8, C11
C3, C6, C9, C12 (1)
Value
0.1 μF
10 μF
Description
Cap, 0603, 50 V, 10%, X7R
Cap, 1206, 50 V, 20%, X5R
Notes:
(1) Capacitors in drain path should be removed for pulsed operation.
Preliminary Datasheet: 01-22-15
© 2014 TriQuint
- 11 of 13 -
Manuf.
Various
Various
Part Number
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2595-CP.PDF ] | |
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