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PDF TGA2594-HM Data sheet ( Hoja de datos )
| Número de pieza | TGA2594-HM | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGA2594-HM
27 – 31 GHz GaN Power Amplifier
Product Description
Qorvo’s TGA2594-HM is a packaged power amplifier
fabricated on Qorvo’s 0.15 um GaN on SiC process
(QGaN15). Operating from 27 to 31 GHz, the TGA2594-
HM achieves 36.5 dBm saturated output power with a
power-added efficiency of 25 %, and 25 dB small signal
gain.
The TGA2594-HM is offered in a hermetically sealed 22-
lead 7 x7 mm ceramic QFN designed for surface mount to
a printed circuit board. The package has a Cu base,
offering superior thermal management. The TGA2594-HM
is ideally suited to support both commercial and military
applications.
Both RF ports have integrated DC blocking capacitors and
are fully matched to 50 Ohms.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Functional Block Diagram
22 21 20 19
1 18
2 17
3 16
4 15
5 14
6 23 13
7 12
Product Features
Frequency Range: 27 – 31 GHz
POUT: 36.5 dBm at PIN = 14 dBm
PAE: 25 % CW
Small Signal Gain: 25 dB
IM3: −35 dBc @ 25 dBm POUT / Tone
Bias: VD = +20 V, IDQ = 140 mA, VG = −3.0 V Typical
Package Dimensions: 7 x 7 x 1.3 mm
Applications
Military SATCOM Terminals
Commercial SATCOM Terminals
Point-to-Point Digital Radio
Point-to Multipoint Digital Radio
8 9 10 11
Ordering Information
Part No. ECCN
TGA2594-HM 3A001.b.2.c
Description
27 – 31 GHz GaN Power
Amplifier
Rev. B
- 1 of 13 -
www.qorvo.com
1 page  
TGA2594-HM
27 – 31 GHz GaN Power Amplifier
Performance Plots – Large Signal
Conditions unless otherwise specified: VD = +20 V, IDQ = 140 mA, VG = −3 V Typical, CW.
Output Power vs. Input Power vs. Temp.
40
Freq = 29 GHz
35
30
25
20 85 °C
25 °C
-40 °C
15
10
-10 -6 -2 2
6 10 14 18 22
Input Power (dBm)
Output Power vs. Frequency vs. Temp.
40
35
30
85 °C
25 25 °C
-40 °C
20
15
Pin = 14 dBm
10
26 27 28 29 30 31 32
Frequency (GHz)
40 Output Power vs. Input Power vs. VD
Freq = 29 GHz, Temp = 25 °C
35
30
25
20
15
10
-10
-6
22 V
20 V
-2 2
6 10 14 18 22
Input Power (dBm)
40 Output Power vs. Frequency vs. IDQ
35
30
140 mA
210 mA
25
280 mA
20
15
Pin = 14 dBm, Temp = 25 °C
10
26 27 28 29 30 31 32
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
40
Temp = 25 °C
35
30
25
26 GHz
28 GHz
20
30 GHz
32GHz
15
10
-10 -6 -2 2 6 10 14 18 22
Input Power (dBm)
Rev. B
- 5 of 13 -
www.qorvo.com
5 Page 
TGA2594-HM
27 – 31 GHz GaN Power Amplifier
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Apply solder paste to each pin of the TGA2594-HM, and heat achieve reflow, being careful not to exceed the
thermal budget.
3. Clean the assembly with alcohol.
4. To attain quoted RF performance, the following is required:
i. On the printed circuit board, there must be two 1mm (0.0394”) diameter openings on the backside
(RF Ground Plane) of the circuit board.
Location of the openings is contained in the Q Evaluation Board layout.
The 1 mm diameter openings for the board are shown in the diagram below in reference to
the base of the package.
ii. Use of a carrier plate with 2 mm (0.0787”) diameter holes.
The holes should be located with respect to the package pin-out as shown in the diagram
below.
The holes should be 4mm deep.
5. To improve thermal performance, the following is recommended:
i. The use of a 4 mil indium shim between the circuit board and the carrier plate.
ii. The In shim should have the same hole diameter and positioning as the carrier plate (see diagram
below for location with respect to the package backside).The holes should be machined fully through
the In shim.
0.2756”
1
0.03”
Location of 0.0787”
diameter holes for
carriers
0.2146”
Location of 0.0394”
diameter openings
for circuit boards
18
0.0197”
0.0108”
7
\
12
Rev. B
- 11 of 13 -
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11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2594-HM.PDF ] | |
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