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TriQuint Semiconductor - 25 Watt Ku-Band GaN Power Amplifier

Numéro de référence TGA2579-FL
Description 25 Watt Ku-Band GaN Power Amplifier
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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TGA2579-FL fiche technique
TGA2579-FL
25 Watt Ku-Band GaN Power Amplifier
Applications
 Ku-band communications
Product Features
 Frequency Range: 13.75 - 15.35 GHz
 Saturated Output Power: 44 dBm
 Power-added Efficiency: 30%
 Small Signal Gain: 32 dB
 Bias: Vd = 25 V, Idq = 1A, Vg = -3.4V typical
Functional Block Diagram
General Description
The TriQuint TGA2579-FL is a packaged Ku-band
power amplifier fabricated on TriQuint’s production-
released, 0.25um GaN on SiC process. Operating
from 13.75 to 15.35 GHz, the TGA2579-FL typically
provides 44 dBm of saturated output power, 30%
power-added efficiency and 32dB of small signal
gain.
The TGA2579-FL features low loss ground-signal-
ground (GSG) RF transitions designed to interface
with a coplanar waveguide multilayer board.
Ideally suited for Ku-band communications, the
TGA2579-FL supports key commercial and de-
fense-related frequency bands.
TriQuint’s 0.25um GaN on SiC process offers su-
perior electrical performance through Ku-band
while maintaining high reliability. In addition, the
use of SiC substrates provides optimum thermal
performance necessary for high power operation.
Lead-free and RoHS compliant.
Pin Configuration
Pin #
1
2,6
3,5,10,12
4
7
8
9
11
13
14
Symbol
Vd
Vg
Gnd
RF In
Vd
Vd
Vdet
RF Out
N/C
Vd
Ordering Information
Part No.
ECCN
TGA2579-FL 3A001.b.2.b
Description
Ku-band Power
Amplifier
Preliminary Data Sheet: 1/8/2013
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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