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PDF TGA2579-2-FL Data sheet ( Hoja de datos )
| Número de pieza | TGA2579-2-FL | |
| Descripción | 20W Ku-Band GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Applications
Ku-band Communications
TGA2579-2-FL
20W Ku-Band GaN Power Amplifier
Product Features
Frequency Range: 14.0 – 15.35 GHz
PSAT : 43 dBm
PAE: 27%
Small Signal Gain: 35 dB
Integrated Voltage Detector
Bias: VD = 25 V, IDQ = 1.0 A, VG = -2.4 V Typical
Package Dimensions: 11.38 X 17.33 X 3.0 mm
Functional Block Diagram
1 14
2 13
3 12
4 11
5 10
69
78
General Description
TriQuint’s TGA2579-2-FL is a power amplifier operating
from 14.0 to 15.35 GHz and typically provides 43 dBm of
saturated output power, 27% power-added efficiency
and 35 dB of small signal gain at mid band.
The TGA2579-2-FL features low loss ground-signal-
ground (GSG) RF transitions designed to interface with a
coplanar waveguide multilayer board.
Ideally suited for Ku-band communications, the
TGA2579-2-FL supports key commercial and defense-
related frequency bands.
TriQuint’s 0.25um GaN on SiC process offers superior
electrical performance while maintaining high reliability.
In addition, the use of SiC substrates provides optimum
thermal performance necessary for reliable high power
operation.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1, 7, 8, 14
2, 6
3, 5, 10, 12
4
9
11
13
Symbol
VD
VG
GND
RF IN
Voltage Detector
RF OUT
N/C
Ordering Information
Part ECCN Description
TGA2579-2-FL 3A001.b.2.b GaN Power Amplifier
Preliminary Datasheet: Rev - 08-16-13
© 2013 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2579-2-FL
20W Ku-Band GaN Power Amplifier
Typical Performance
Conditions unless otherwise specified: VD = 25 V, IDQ = 1.0 A, VG = -2.4 V Typical, CW
45 POUT, Gain, PAE vs. PIN @ 14.4 GHz
Temp.=+25°C
40
35
30
25
20
15
10
5
0
POUT
Gain
PAE
7 14
PIN (dBm)
21
28
45 Power, ID vs. PIN @ 14.4 GHz
Temp.=+25°C
40
35
30
25 POUT
ID
20
15
10
5
0 7 14 21
Input Power (dBm)
3000
2700
2400
2100
1800
1500
1200
900
600
28
45 POUT, Gain, PAE vs. PIN @ 15.35 GHz
Temp.=+25°C
40
35
30
25
20
15
10
5
0
POUT
Gain
PAE
7 14
PIN (dBm)
21
28
45 Power, ID vs. PIN @ 15.35 GHz
Temp.=+25°C
40
35
30
POUT
25 ID
20
15
10
5
0 7 14 21
Input Power (dBm)
3800
3400
3000
2600
2200
1800
1400
1000
600
28
50
Temp.=+25°C
46
PSAT vs. VD
PIN = 24dBm
42
25V 1.0A
38 30V 1.0A
34
30
13.5
14 14.5 15
Frequency (GHz)
15.5
40
Temp.=+25°C
35
PAE vs. VD
PIN = 24dBm
30
25
20 25V 1.0A
30V 1.0A
15
10
13.5
14 14.5 15
Frequency (GHz)
15.5
Preliminary Datasheet: Rev - 08-16-13
© 2013 TriQuint
- 5 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
TGA2579-2-FL
20W Ku-Band GaN Power Amplifier
Assembly Notes
1. Clean the board or module with alcohol. Allow it to dry fully.
2. Nylock screws are recommended for mounting the TGA2579-2-FL to the board.
3. To improve the thermal and RF performance, we recommend a heat sink attached to the bottom
of the board and apply thermal compound or 4 mils Indium shim between the heat sink and the
TGA2579-2-FL base.
4. Apply solder to each pin of the TGA2579-2-FL.
5. Clean the assembly with alcohol.
Preliminary Datasheet: Rev - 08-16-13
© 2013 TriQuint
- 11 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2579-2-FL.PDF ] | |
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