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PDF TGA2576-FS Data sheet ( Hoja de datos )
| Número de pieza | TGA2576-FS | |
| Descripción | GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Electronic Warfare
Radar
Test Instrumentation
EMC Amplifier
TGA2576-FS
2.5 to 6GHz 40W GaN Power Amplifier
Product Features
Frequency Range: 2.5 to 6 GHz
PSAT: 46.5 dBm @ PIN = 26 dBm
PAE: 35%
Small Signal Gain: 29 dB
Bias: Pulse VD = 30 V, IDQ = 1.55A, VG = −2.4 V Typ
Pulse: PW = 150 us, DC = 5%
Dimensions: 12.7 x 12.7 x 3.89 mm
Functional Block Diagram
General Description
TriQuint’s TGA2576-FS is a packaged wideband power
amplifier designed on TriQuint’s production 0.25 um
GaN on SiC process. Operating from 2.5 to 6 GHz, the
TGA2576-FS achieves 40 W of saturated output power,
greater than 35% power-added efficiency and 29 dB
small signal gain.
Both RF ports are fully matched to 50 Ω, the TGA2576-
FS is ideally suited to support both commercial and
defense related opportunities.
Pin Configuration
Pin No.
1, 3, 5, 7, 8, 10, 12, 14
2, 6
4
9, 13
11
Symbol
GND
VG
RFIN
VD
RFOUT
Lead-free and RoHS compliant
Evaluation Boards are available up on request.
Ordering Information
Part
ECCN Description
TGA2576-FS 3A001.b.2.a 2.5 to 6 GHz 40W GaN PA
Preliminary Datasheet: Rev B 1-08-15
© 2015 TriQuint
- 1 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2576-FS
2.5 to 6GHz 40W GaN Power Amplifier
Typical Performance: Small Signal, CW
Gain vs. Frequency vs. Temperature
36
VD = 30 V, IDQ = 1.55 A, VG = −2.4 V Typ.
34
32
30
28
26
24
22 +85 °C
20 +25 °C
−40 °C
18
16
14
234567
Frequency (GHz)
8
36 Gain vs. Frequency vs. VD
34 IDQ = 1.55 A, VG = −2.4 V Typ.
Temp. = +25 °C
32
30
28
26
24 25 V
22 30 V
20
18
16
14
2345678
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
0
VD = 30 V, IDQ = 1.55 A, VG = −2.4 V Typ.
-5 +85 °C
+25 °C
-10 −40 °C
-15
-20
-25
-30
2345678
Frequency (GHz)
0 Input Return Loss vs. Frequency vs. VD
IDQ = 1.55 A, VG = −2.4 V Typ.
Temp. = +25 °C
-5
-10
-15
-20
-25 25 V
30 V
-30
2345678
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
0
VD = 30 V, IDQ = 1.55 A, VG = −2.4 V Typ.
-5
-10
-15
-20
+85 °C
+25 °C
-25 −40 °C
-30
2345678
Frequency (GHz)
0 Output Return Loss vs. Frequency vs. VD
IDQ = 1.55 A, VG = −2.4 V Typ.
-5
-10
-15 25 V
30 V
-20
-25
Temp. = +25 °C
-30
2345678
Frequency (GHz)
Preliminary Datasheet: Rev B 1-08-15
© 2015 TriQuint
- 5 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Application Circuit
TGA2576-FS
2.5 to 6GHz 40W GaN Power Amplifier
VG
(Note 1)
C5 C1
1uF 0.1uF
RFIN
C6 C2
1uF 0.1uF
1
2
3
4
5
6
7
Notes:
1. VG can be biased from either side (Pins 2 or 6)
2. VD must be biased from both sides (Pins 9 and 13)
14
13
12
RF V11
10
OUT
D
(Note 2)
9
8
Bias-up Procedure
1. Set power supply: ID limit to 5 A, IG limit to 10 mA
2. Apply -5.0 V to VG (for pinch-off)
3. Increase VD to +30V; Ensure IDQ < 10 mA
4. Adjust VG more positive until IDQ, PEAK = 1.55 A
(IDQ, AVG = 77.5 mA for 5% duty cycle); VG ~ -2.4 V typ
5. Apply RF signal
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to −5.0 V; Ensure IDQ ~ 0 mA
3. Reduce VD to 0 V or turn off the pulse generator to
disable the VD modulator
4. Turn off VG suply
Preliminary Datasheet: Rev B 1-08-15
© 2015 TriQuint
- 11 of 15 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TGA2576-FS.PDF ] | |
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