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PDF TGA2575-TS Data sheet ( Hoja de datos )
| Número de pieza | TGA2575-TS | |
| Descripción | Ka-Band 3 Watt Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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TGA2575-TS
Ka-Band 3 Watt Power Amplifier
Applications
Military Radar
Communications
Product Features
Frequency Range: 32.0 – 38.0 GHz
Power: 35.5 dBm Psat
PAE: 22%
Gain: 19 dB
Return Loss: 12 dB
Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
Dimensions: 5.31 x 8.92 x 0.49 mm
Functional Block Diagram
C5
100 pF
6
TGA2575-TS
C3
1000 pF
5
C1
1000 pF
14
C6
100 pF
C4
1000 pF
2
C2
1000 pF
3
General Description
Bond Pad Configuration
TriQuint’s TGA2575-TS is a wideband power amplifier
fabricated on TriQuint’s production-released 0.15um
pwr-pHEMT process. Operating from 32 GHz to 38
GHz, it achieves 35.5 dBm saturated output power, 22%
PAE and 19 dB small signal gain over most of the band.
The TGA2575-TS is a 2 mil thick GaAs die mounted on
a 10 mil thick CuMoCu carrier. This provides the
customer a known good die attach to assist in thermal
management and provide easier handling.
Pin #
1
2, 6
3, 5
4
Symbol
RF In
Vg
Vd
RF Out
Fully matched to 50 ohms, ROHS compliant and with
integrated DC blocking caps on both I/O ports, the
TGA2575-TS is ideally suited to support both
commercial and defense related opportunities.
The TGA2575-TS is 100% DC and RF tested on-wafer
to ensure compliance to performance specifications.
Lead-free and RoHS compliant
Data Sheet: Rev - 12/14/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
ECCN
Description
TGA2575-TS 3A001.b.2.d Ka-band Power Amplifier
- 1 of 12 -
Disclaimer: Subject to change without notice
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TGA2575-TS
Ka-Band 3 Watt Power Amplifier
Typical Performance (cont.)
Output Power vs. Freq. vs. Input Power
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
38
37 Pin=+23dBm
36 Pin=+22dBm
35 Pin=+21dBm
34 Pin=+20dBm
33 Pin=+19dBm
32 Pin=+18dBm
31 Pin=+17dBm
30 Pin=+16dBm
29
28 Pin=+15dBm
30 32 34 36 38
Frequency (GHz)
PAE vs. Freq. vs. Input Power
Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical, +25°C
35
Pin=+23dBm
30 Pin=+22dBm
25 Pin=+21dBm
20 Pin=+20dBm
Pin=+19dBm
15 Pin=+18dBm
10 Pin=+17dBm
5 Pin=+16dBm
0 Pin=+15dBm
30 32 34 36 38
Frequency (GHz)
Data Sheet: Rev - 12/14/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
5 Page 
TGA2575-TS
Ka-Band 3 Watt Power Amplifier
Product Compliance Information
ESD Information
ESD Rating:
Value:
Test:
Standard:
TBD
TBD
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ECCN
US Department of Commerce 3A001.b.2.d
Solderability
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
Reflow process assembly notes:
• Attachment of the carrier should use solder for optimum thermal management.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Data Sheet: Rev - 12/14/12
© 2012 TriQuint Semiconductor, Inc.
- 11 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA2575-TS.PDF ] | |
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