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SeCoS - 1.5 Amp Silicon Bridge Rectifiers

Numéro de référence TB153S
Description 1.5 Amp Silicon Bridge Rectifiers
Fabricant SeCoS 
Logo SeCoS 





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TB153S fiche technique
Elektronische Bauelemente
TB151S ~ TB157S
Voltage 50V ~ 1000V
1.5 Amp Silicon Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Glass passivated chip junction
High surge overload rating: 30A peak
Saves space on printed circuit boards
Plastic material has U/L flammability classification94V-O
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Polarity: Polarity symbols marked on body Dimensions
in inches and (millimeters)
Mounting Position: Any
Weight: 0.0078 ounce, 0.22 gram
PACKAGE INFORMATION
Package
MPQ
TBS 4K
Leader Size
13 inch
TBS
-+
A
B
F
C
E
D
G
H
I
REF.
A
B
C
D
E
Millimeter
Min.
4.25
4.85
1.15
Max.
4.55
5.15
1.45
0.60 0.70
3.90 4.10
REF.
F
G
H
I
Millimeter
Min.
6.30
0.05
4.25
Max.
6.70
0.15
4.55
0.50 0.70
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
TB
151S
TB
152S
Part Number
TB
153S
TB
154S
TB
155S
TB
156S
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800
Maximum RMS Bridge Input Voltage
VRMS
35 70 140 280 350 560
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800
Maximum Average Forward Rectified Current
@TA=25°C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
I(AV)
IFSM
1.5
40
Maximum Forward Voltage @ 1.5A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA=25°C
TA=100°C
Operating and Storage temperature range
VF
IR
TJ,TSTG
1.1
5
0.5
-55~150
TB
157S
1000
700
1000
Unit
V
V
V
A
A
V
μA
°C
http://www.SeCoSGmbH.com/
14-Feb-2012 Rev. B
Any changes of specification will not be informed individually.
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