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Renesas - Silicon N Channel MOS FET

Numéro de référence RJK5026DPP-M0
Description Silicon N Channel MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK5026DPP-M0 fiche technique
RJK5026DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0422EJ0100
Rev.1.00
May 26, 2011
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
6
18
6
18
4
0.88
28.5
4.38
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0422EJ0100 Rev.1.00
May 26, 2011
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