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Renesas - Silicon N Channel Thermal FET

Numéro de référence RJF0408JPD
Description Silicon N Channel Thermal FET
Fabricant Renesas 
Logo Renesas 





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RJF0408JPD fiche technique
Target Specifications Datasheet
RJF0408JPD
40V, 30A Silicon N Channel Thermal FET
Power Switching
R07DS1133EJ0100
Rev.1.00
Dec 12, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V.
AEC-Q101 Compliant.
Endurance capability against to ESD.
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
1
2
3
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
Drain current
VGSS
ID Note3
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg 50 Ω
3. It provides by the current limitation lower bound value.
Ratings
40
16
–2.5
30
30
6
240
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS1133EJ0100 Rev.1.00
Dec 12, 2013
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