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Renesas - Silicon N Channel MOS FET

Numéro de référence RJF0610DSP
Description Silicon N Channel MOS FET
Fabricant Renesas 
Logo Renesas 





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RJF0610DSP fiche technique
Target Specifications Datasheet
RJF0610DSP
Silicon N Channel MOS FET Series
Power Switching
R07DS0560EJ0200
Rev.2.00
Apr 16, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Temperature hysteresis type.
High density mounting
Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8765
1, 3
2, 4
1234
5, 6, 7, 8
2
G
Source
Gate
Drain
Gate Resistor
Current
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS1
DD
78
4 Current
G
Gate Resistor
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
1
S MOS2
DD
56
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
1.5
0.95
77.4
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. Tch = 25C, Rg 50 , L = 100 mH
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0560EJ0200 Rev.2.00
Apr 16, 2012
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