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Polyfet RF Devices - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Numéro de référence L8711P
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Fabricant Polyfet RF Devices 
Logo Polyfet RF Devices 





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L8711P fiche technique
polyfet rf devices
L8711P
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
7.0 Watts Single Ended
Package Style S08 P
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
60 Watts
Junction to
Case Thermal
Resistance
o
2.50 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
150 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
8.0 A
Drain to
Gate
Voltage
36 V
Drain to
Source
Voltage
36 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gain
η Drain Efficiency
10
50
VSWR Load Mismatch Tolerance
7.0 WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
% Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
20:1 Relative Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
40 V Ids = 0.20 mA, Vgs = 0V
2.0 mA
Vds = 7.5 V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.20 A, Vgs = Vds
gM Forward Transconductance
1.7 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.40
Ohm
Vgs = 20V, Ids = 8.00 A
Idsat
Saturation Current
13.00
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
50.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz
Crss Common Source Feedback Capacitance
2.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
40.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 12/12/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com

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