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PDF ACE2390M Data sheet ( Hoja de datos )
| Número de pieza | ACE2390M | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE2390M
N-Channel 150-V MOSFET
Description
ACE2390M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current b
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
150
±20
1.1
0.9
5
1.6
1.3
0.8
-55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
t<=10sec
Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Typical Performance Characteristics
ACE2390M
N-Channel 150-V MOSFET
Qg - Total Gate Charge (nC)
7. Gate Charge
TJ –Junction Temperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
VDS Drain to Source Voltage (V)
9. Safe Operating Area
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
VER 1.1 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE2390M.PDF ] | |
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