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CGHV40050 Datasheet دیتاشیت PDF دانلود
دیتاشیت - Cree - GaN HEMT
| شماره قطعه | CGHV40050 | ||
| شرح مفصل | GaN HEMT | ||
| تولید کننده | Cree | ||
| آرم |  |
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1 Page
CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40050, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications up to 4 GHz. The reference HPA design in the
datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high
efficiency, high gain and wide bandwidth capabilities. The device can be
used for a range of applications from narrow band UHF, L and S Band as
PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6
well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and
pill package.
Typical Performance Over 800 MHz - 2.5 GHz (TC = 25˚C), 50 V
Parameter
800 MHz
1.2 GHz
1.4 GHz
Small Signal Gain
17.6
16.9
17.7
Saturated Output Power
65 70 63
Drain Efficiency @ PSAT
63 63
Input Return Loss
5 5.5
Note:
Measured CW in the CGHV40050F-AMPapplication circuit.
60
4.2
1.8 GHz
17.5
77
53
8
2.0 GHz
14.8
60
52
5
Features
• Up to 4 GHz Operation
• 77 W Typical Output Power
• 17.5 dB Small Signal Gain at 1.8 GHz
• Application Circuit for 0.8 - 2.0 GHz
• 53 % Efficiency at PSAT
• 50 V Operation
Units
dB
W
%
dB
Subject to change without notice.
www.cree.com/rf
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| قانون اساسی | صفحه 11 | ||
| دانلود | [ CGHV40050 دیتاشیت ] | ||
دیتاشیت توصیه
| شماره قطعه | شرح مفصل | تولید کنندگان |
| CGHV40050 | GaN HEMT | Cree |
| US18650VTC5A | Lithium-Ion Battery |  Sony |
| TSPC106 | PCI Bus Bridge Memory Controller |  ATMEL |
| TP9380 | NPN SILICON RF POWER TRANSISTOR |  Advanced Semiconductor |
| www.DataSheetWiki.com | 2020 | تماس با ما | جستجو |