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PDF CGHV40030 Data sheet ( Hoja de datos )
| Número de pieza | CGHV40030 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications. The datasheet
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50
volt rail circuit while housed in a 2-lead flange or pill package.
Package Type: 440P1N66: CaGnHdV44400013906
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V
Parameter
0.96 GHz
1.1 GHz
Gain @ PSAT
15.6
15.8
Saturated Output Power
29 30
Drain Efficiency @ PSAT
62
Note:
Measured CW in the CGHV40030-AMP application circuit.
74
1.25 GHz
16.6
36
64
1.4 GHz
15.8
31
67
Units
dB
W
%
Features
• Up to 6 GHz Operation
• 30 W Typical Output Power
• 16 dB Gain at 1.2 GHz
• Application circuit for 0.96 - 1.4 GHz
• 70% Efficiency at PSAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
1
1 page  
Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
500
1000
2000
3000
4000
Z Source
5.5 + j0.9
2.6 - j1.3
3.8 - j0.9
2.7 - j7.0
2.8 - j13.4
Z Load
43 + j20.8
25.5 + j29.1
11.5 + j17.3
6.7 + j7.8
6.5 + j1.7
Note1: VDD = 50 V, IDQ = 150 mA
Note2: Impedances are extracted from source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV40030 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGHV40030 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet CGHV40030.PDF ] | |
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