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CGHV40030 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Cree - GaN HEMT

شماره قطعه CGHV40030
شرح مفصل GaN HEMT
تولید کننده Cree 
آرم Cree 





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CGHV40030 شرح
CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications. The datasheet
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50
volt rail circuit while housed in a 2-lead flange or pill package.
Package Type: 440P1N66: CaGnHdV44400013906
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V
Parameter
0.96 GHz
1.1 GHz
Gain @ PSAT
15.6
15.8
Saturated Output Power
29 30
Drain Efficiency @ PSAT
62
Note:
Measured CW in the CGHV40030-AMP application circuit.
74
1.25 GHz
16.6
36
64
1.4 GHz
15.8
31
67
Units
dB
W
%
Features
• Up to 6 GHz Operation
• 30 W Typical Output Power
• 16 dB Gain at 1.2 GHz
• Application circuit for 0.96 - 1.4 GHz
• 70% Efficiency at PSAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
1

قانون اساسیصفحه 11
دانلود [ CGHV40030 دیتاشیت ]




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