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R1RP0416DI fiches techniques PDF

Renesas - 4M High Speed SRAM

Numéro de référence R1RP0416DI
Description 4M High Speed SRAM
Fabricant Renesas 
Logo Renesas 





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R1RP0416DI fiche technique
R1RP0416DI Series
Wide Temperature Range Version
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0110-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 V supply: 5.0 V ± 10%
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 160 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
Center VCC and VSS type pin out
Temperature range: 40 to +85°C
Ordering Information
Type No.
R1RP0416DGE-2PI
R1RP0416DSB-2PI
Access time
12 ns
12 ns
Package
400-mil 44-pin plastic SOJ (44P0K)
400-mil 44-pin plastic TSOPII (44P3W-H)
Rev.1.00, Mar.12.2004, page 1 of 12

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