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Número de pieza | R1RP0408DI | |
Descripción | 4M High Speed SRAM | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de R1RP0408DI (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! R1RP0408DI Series
Wide Temperature Range Version
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0114-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0408DI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 36-pin plastic SOJ.
Features
• Single 5.0 V supply: 5.0 V ± 10 %
• Access time: 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
• Center VCC and VSS type pin out
• Temperature range: −40 to +85°C
Ordering Information
Type No.
R1RP0408DGE-2PI
Access time
12 ns
Package
400-mil 36-pin plastic SOJ (36P0K)
Rev.1.00, Mar.12.2004, page 1 of 10
1 page R1RP0408DI Series
DC Characteristics
(Ta = −40 to +85°C, VCC = 5.0 V ± 10 %, VSS = 0 V)
Parameter
Symbol
Input leakage current
Output leakage current
Operation power supply current
IILII
IILOI
ICC
Min
Max
2
2
130
Standby power supply current I
SB
ISB1
40
5
Output voltage
VOL
0.4
V
OH
2.4
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
VIN = VSS to VCC
VIN = VSS to VCC
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = V /V
IH IL
Min cycle, CS# = V ,
IH
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS# ≥ VCC − 0.2 V,
(1)
0
V
≤
V
IN
≤
0.2
V
or
(2)
V
CC
≥
V
IN
≥
V
CC
−
0.2
V
IOL = 8 mA
I
OH
=
−4
mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Input capacitance*1
CIN
6
Input/output capacitance*1
CI/O
8
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions
VIN = 0 V
VI/O = 0 V
Rev.1.00, Mar.12.2004, page 5 of 10
5 Page Revision History
R1RP0408DI Series Data Sheet
Rev. Date
0.01 Oct. 01, 2003
1.00 Mar.12.2004
Contents of Modification
Page Description
Initial issue
Deletion of Preliminary
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet R1RP0408DI.PDF ] |
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