|
|
Numéro de référence | TESDT5V0A | ||
Description | Bi-directional ESD Protection Array | ||
Fabricant | Taiwan Semiconductor | ||
Logo | |||
1 Page
Small Signal Product
Bi-directional ESD Protection Array
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns)
- Meet IEC61000-4-5 (Lightning) rating. 5A (8/20μs)
- Protects two directional I/O lines
- Working voltage: 5V
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-23-5 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- Moisture sensitivity: level 1, per J-STD-020
- High temperature soldering guaranteed : 260°C/10s
- Weight: 14 ± 0.5 mg
- Marking code: S5V
SOT-23-5
TESDT5V0A
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Pulse Power (tp=8/20μs waveform)
Peak Pulse Current (tp=8/20μs)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
PPP
IPP
VESD
100
2.5
± 15
±8
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
IR = 1 mA
VR = 5 V
IPP = 1 A
IPP = 2.5 A
VR = 0 V , f = 1.0 MHz
SYMBOL
VRWM
V(BR)
IR
VC
CJ
MIN
MAX
-5
6.5 -
-1
- 9.8
- 15
20
UNIT
W
A
KV
oC
UNIT
V
V
μA
V
pF
Document Number: DS_S1501026
Version: C15
|
|||
Pages | Pages 5 | ||
Télécharger | [ TESDT5V0A ] |
No | Description détaillée | Fabricant |
TESDT5V0A | Bi-directional ESD Protection Array | Taiwan Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |