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Naina Semiconductor - Standard Recovery Diodes

Numéro de référence 130NS
Description Standard Recovery Diodes
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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130NS fiche technique
Naina Semiconductor Ltd.
130NS(R)
Standard Recovery Diodes, 130A
Features
Diffused Series
Industrial grade
Available in Normal and Reverse polarity
Metric and UNF thread type
Electrical Specifications (TE = 25oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. forward current @ TC = 125oC 130
A
VFM
Maximum peak forward voltage drop @
rated IF(AV)
IFSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
I2t
Maximum I2t rating (non-rep) for 5 to 10
msec
1.3 V
2500 A
26000 A2sec
DO-205AA (DO-8)
Voltage Ratings (TE = 25oC, unless otherwise noted)
Type Voltage
number Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
RMS reverse
voltage
(V)
10 100
70
20 200
140
40 400
280
60 600
420
130NS(R)
80
800
560
100 1000
700
120 1200
840
140 1400
980
160 1600
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IR(AV), Maximum
avg. reverse
leakage current
(µA)
200
Thermal & Mechanical Specifications (TE = 25oC, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ Operating junction temperature range
Tstg Storage temperature
F Mounting torque (non-lubricated threads)
W Approximate allowable weight
Values
0.30
-40 to 180
-55 to 180
10
130
Units
oC/W
oC
oC
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com

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