DataSheetWiki


DPG20C200PN fiches techniques PDF

IXYS - High Performance Fast Recovery Diode

Numéro de référence DPG20C200PN
Description High Performance Fast Recovery Diode
Fabricant IXYS 
Logo IXYS 





1 Page

No Preview Available !





DPG20C200PN fiche technique
DPG 20 C 200 PN
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 20 C 200 PN
1
2
3
VRRM = 200 V
IFAV = 2x 10 A
t rr =
35 ns
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Backside: isolated
Package:
Housing: TO-220FP
rIndustry standard outline
rPlastic overmolded tab for
r electrical isolation
rIsolation Voltage 2500 V
rUL registered E 72873
rEpoxy meets UL 94V-0
rRoHS compliant
Symbol
VRRM
IR
VF
IFAV
VF0
rF
RthJC
T VJ
Ptot
I FSM
I RM
trr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 200 V
VR = 200 V
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 10 A; VR = 130 V
-diF/dt = 200 A/µs
CJ junction capacitance
VR = 150 V; f = 1 MHz
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TC = 125°C
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
Ratings
min. typ. max.
200
1
0.06
1.27
1.45
0.98
1.17
10
0.74
17.7
4.40
-55 175
35
140
3
5.5
35
45
15
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090323a

PagesPages 4
Télécharger [ DPG20C200PN ]


Fiche technique recommandé

No Description détaillée Fabricant
DPG20C200PB High Performance Fast Recovery Diode IXYS
IXYS
DPG20C200PN High Performance Fast Recovery Diode IXYS
IXYS

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche