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PDF 1N4148W-G Data sheet ( Hoja de datos )
| Número de pieza | 1N4148W-G | |
| Descripción | High Speed SMD Switching Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Small Signal Product
High Speed SMD Switching Diode
1N4148W-G
Taiwan Semiconductor
FEATURES
- Fast switching device (trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 10 ± 0.5 mg
- Marking Code: T4
SOD-123
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Power dissipation
DC blocking voltage
Repetitive peak reverse voltage
Work peak reverse voltage
RMS reverse voltage
Repetitive peak forward current
Mean forward current
SYMBOL
PD
VR
VRRM
VRWM
VR(RMS)
IFRM
IO
VALUE
350
100
100
100
70
300
150
Non-repetitive peak forward surge current @ t=1 ms
@ t=10 ms
IFSM
2.0
1.0
Thermal resistance (Junction to Ambient) (Note 1)
Junction and storage temperature range
RθJA
TJ , TSTG
357
-65 to + 150
PARAMETER
SYMBOL
Forward voltage
IF=1.0mA
IF=10mA
IF=50mA
VF
IF=150mA
VR=20V
Reverse leakage current
VR=75V
VR=25V, Tj=150°C
IR
VR=75V, Tj=150°C
Junction capacitance
VR=0, f=1.0MHz
CJ
Reverse recovery time
(Note 2)
trr
Notes : 1. Valid provided that terminals are kept at ambient temperature
Notes : 2. Reverse Recovery Test Conditions : IF=10mA, IR=10mA, RL=100Ω, IRR=1mA
MIN
-
-
-
-
-
-
-
-
-
-
MAX
0.715
0.855
1.0
1.25
25
2.5
30
50
2.0
4.0
UNIT
mW
V
V
V
V
mA
mA
A
oC/W
oC
UNIT
V
nA
μA
μA
μA
pF
ns
Document Number: DS_S1405027
Version: C15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1N4148W-G.PDF ] | |
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