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Taiwan Semiconductor - 225mW SMD Switching Diode

Numéro de référence BAS70
Description 225mW SMD Switching Diode
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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BAS70 fiche technique
Small Signal Product
FEATURES
225mW SMD Switching Diode
- Low turn-on voltage
- Fast switching
- PN junction guard ring for transient and ESD protection
BAS70 / -04 / -05 / -06
Taiwan Semiconductor
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
(Note 1)
@ t 1.0 s
(Note 1)
(Note 1)
VRRM
VRWM
VR
VR(RMS)
IF
IFSM
PD
RθJA
70
49
70
100
200
625
Operating Junction Temperature
Storage Temperature Range
TJ
TSTG
-55 to + 125
-55 to + 150
PARAMETER
Reverse breakdown voltage
IR = 10 µA
Forward voltage
tp=300µs , IF=1.0mA
tp300µs , IF=15mA
Reverse leakage current
tp300µs , VR=50V
Junction capacitance
VR = 0 V, f = 1 MHz
Reverse revovery time
IF = IR = 10 mA, IRR = 100 , IRR = 1 mA
Notes: 1. Valid provided that terminals are kept at ambient temperature
2. Test period 3000 µs
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
70
-
-
-
-
-
MAX
-
410
1000
100.00
2
5
UNIT
V
V
mA
mA
mW
K/W
°C
°C
UNIT
V
mV
nA
pF
ns
Document Number: DS_S1404012
Version: E14

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