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Taiwan Semiconductor - Schottky Diode

Numéro de référence B5819W
Description Schottky Diode
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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B5819W fiche technique
Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop
- Surface Mounted Device
- Moisture sensitivity level 1
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: Bend lead SOD-123 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 10mg (approximately)
SOD-123
APPLICATION
Low voltage, high frequency inverters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
B5817W
VALUE
B5818W
B5819W
Non-Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Currect
Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
PD
RthjA
TJ
TSTG
20 30 40
20 30 40
20 30 40
20 30 40
14 21 28
1
9
1.5
500
250
125
- 55 to + 150
UNIT
V
V
V
V
V
A
A
A
mW
oC/W
oC
oC
PARAMETER
B5817W
Reverse Breakdown Voltage
B5818W
B5819W
B5817W
Reverse Voltage Leakage Current B5818W
B5819W
B5817W
Forward Voltage
B5818W
Diode Capacitance
B5819W
Document Number: DS_S1404018
TEST CONDITION
at IR = 1 mA
at VR = 20 V
at VR = 30 V
at VR = 40 V
at IF = 1A
at IF = 3A
at IF = 1A
at IF = 3A
at IF = 1A
at IF = 3A
VR=4V, f=1.0MHz
SYMBOL
V(BR)
IR
VF
CD
MIN
20
30
40
--
--
--
--
MAX
UNIT
V
1 mA
0.45
0.75
0.55
0.875
0.6
0.9
120
V
V
V
pF
Version: A14

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