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Taiwan Semiconductor - Schottky Diode

Numéro de référence B5819WS
Description Schottky Diode
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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B5819WS fiche technique
Small Signal Product
B5817WS/B5818WS/B5819WS
Taiwan Semiconductor
SOD-323 20~40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop
- Surface mount device type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: Bend lead SOD-323 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 4.3mg (approximately)
SOD-323
APPLICATION
- General purpose rectification application
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
VALUE
SYMBOL
B5817WS B5818WS B5819WS
Non-Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Currect
Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
VRM
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
PD
RthjA
TJ
TSTG
20 30 40
20 30 40
20 30 40
20 30 40
14 21 28
1
9
1.5
250
400
125
- 55 to + 150
UNIT
V
V
V
V
V
A
A
A
mW
oC/W
oC
oC
PARAMETER
B5817WS
Reverse Breakdown Voltage B5818WS
B5819WS
B5817WS
Reverse Voltage Leakage CurrentB5818WS
B5819WS
B5817WS
Forward Voltage
B5818WS
Diode Capacitance
B5819WS
TEST CONDITION
at IR = 1 mA
at VR = 20 V
at VR = 30 V
at VR = 40 V
at IF = 1A
at IF = 3A
at IF = 1A
at IF = 3A
at IF = 1A
at IF = 3A
VR=4V, f=1.0MHz
Document Number: DS_S1404015
SYMBOL
V(BR)
IR
VF
CD
MIN
20
30
40
--
--
--
--
MAX
UNIT
V
1 mA
0.45
0.75
0.55
0.875
0.6
0.9
120
V
V
V
pF
Version: A14

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